| 1. | These dc i - v curves by numerical calculation duplicate very well the results of experiment
此串联、并联阵列的数值计算结果与我们实验所观测到的结果也是一致的。 |
| 2. | So , with the exception of the later sylvania 12ax7as , all these tubeshave essentially the same characteristics - the i vs v curves
所以，除了问世时间稍后的喜万年12ax7a ,所有的这些胆管都具备基本一致的电气特性- -屏压、流曲线。 |
| 3. | According to photomicrograph , the diameter of emitting aperture is about 40um . in term of i - v curve , the threshold voltage is 1 . 4v
国际上，已经有先例将sio _ 2探尖与vcsel采用简单、有效的胶合方法结合，制成vcsel snom复合探测器。 |
| 4. | If the pulses are of the same polarity , the i - v curve of varistor will become asymmetric , i . e . , the positive degradation is less than the negative degradation
如果所受的突波为单一极性，则受突波侵袭后之样品的i - v曲线呈现不对称性，亦即正向劣化程度低于反向劣化程度。 |
| 5. | We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress
该方法根据电荷陷落的动态平衡方程，测量恒流应力下mos电容的栅电压变化曲线和应力前后的高频cn曲线变化求解陷阶密度。 |
| 6. | According the simulated results , the dark i - v curve is in agreement with the experimental date from literature , but the i - v curve under illumination doesn ’ t fit the experimental date from literature in the insaturation region
在使用现有理论的仿真结果中,获得的暗电流的i - v曲线与文献中实验数据一致,而稳态光照下i - v关系曲线与文献报道的实测结果在非饱和段不吻合。 |
| 7. | These results show that the dc i - v curves of series arrays emerged some transition location and the ic decreased at the same time , but the dc i - v curves of parallel arrays were similar to what the single josephson junction ' s was
由计算结果可看出，串联阵列的直流i - v特性曲线上出现了多个转变点，临界电流也有所降低，而并联阵列的直流i - v特性曲线和单个约瑟夫森结的直流i - v曲线类似。 |
| 8. | For the first time , we reported the barrier height of au / algan is 1 . 08ev by analysis on various i - v curves under corresponding temperatures . 3 ^ we reported oriented polycrystalline gan on silica substrates using a new method named ga nitridation
3 、采用金属镓层氮化技术，利用我们自行改造的热蒸发设备和氨气氮化设备，在无定形石英衬底上生长出具有择优取向的多晶gan ，取得了一些阶段性的成果。 |
| 9. | Polycrystalline diamond films were deposited on n - type si substrates . in order to achieve a better distribution of the implanted element , boron ions were implanted by two steps . the i - v curves were studied , the p - n junction effect is very evident
在n型引衬底上沉积一层连续的金刚石膜，通过二次离子注入的方法使b离子比较均匀的分布在金刚石膜中，通过测量i - v曲线，可以明显的看出p - n结效应的存在。 |
| 10. | Chapter three focuses on the manufacture of superconducting josephson junctions and the basic characteristics of the type manufactured josephson junctions were studied from experiment and analyzed from theory . these dc i - v curves of josephson junctions were observed separately
第三章则给出了超导约瑟夫森结的制作过程，并对所制得的几类典型约瑟夫森结进行了实验研究与理论分析，分别得出了它们的直流i - v特性曲线。 |
